Suwon, South Korea

Kiheun Lee

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: The Innovations of Kiheun Lee

Kiheun Lee is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work exemplifies the intersection of technology and creativity, showcasing the potential for advancements in electronic memory solutions.

Latest Patents

Kiheun Lee holds a patent for a ferroelectric memory device. This device includes a channel layer, a gate insulation layer on the channel layer, and a gate electrode layer on the gate insulation layer. The gate insulation layer comprises a ferroelectric inductive layer and a ferroelectric stack structure on the ferroelectric inductive layer. The ferroelectric stack structure is arranged in an order or reverse order of a ferroelectric layer and a non-ferroelectric layer. This innovation represents a significant step forward in memory technology, with potential applications in various electronic devices.

Career Highlights

Kiheun Lee is currently employed at Samsung Electronics Ltd., a leading global technology company. His role at Samsung allows him to work on cutting-edge technologies and contribute to the development of advanced electronic products. His expertise in ferroelectric memory devices positions him as a valuable asset to the company and the industry as a whole.

Collaborations

Kiheun Lee collaborates with fellow inventor Yongseok Kim. Their partnership highlights the importance of teamwork in driving innovation and developing new technologies. Together, they work towards enhancing the capabilities of memory devices and exploring new possibilities in the field.

Conclusion

Kiheun Lee's contributions to the field of ferroelectric memory devices demonstrate his innovative spirit and commitment to advancing technology. His work at Samsung Electronics Ltd. and collaboration with Yongseok Kim further emphasize the importance of collaboration in achieving groundbreaking advancements. The future of memory technology looks promising with inventors like Kiheun Lee leading the way.

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