Kian Ming Ng

Title: Kian Ming Ng: Innovator in Ferroelectric Transistor Technology

Introduction

Kian Ming Ng is a prominent inventor based in Singapore, known for his contributions to the field of semiconductor technology. He has made significant strides in the development of ferroelectric transistors, which are crucial for advancing memory device technology.

Latest Patents

Kian Ming Ng holds a patent for a Fe-FET structure with a buried electrode. This innovative ferroelectric transistor (FeFET) memory device features a metal gate, a gate dielectric layer adjacent to the metal gate, a semiconductor channel layer adjacent to the gate dielectric layer, a metal drain electrode, and a metal source electrode recessed into the semiconductor channel layer. The design allows the metal gate to be oriented above or below the metal source and drain electrodes with respect to a semiconductor substrate. This patent showcases his expertise in creating efficient and effective memory solutions.

Career Highlights

Kian Ming Ng is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance and reliability of memory devices, making a lasting impact in the industry.

Collaborations

Throughout his career, Kian Ming Ng has collaborated with talented professionals, including Shyue Seng Tan and Eng Huat Toh. These partnerships have fostered innovation and contributed to the successful development of advanced technologies in the semiconductor field.

Conclusion

Kian Ming Ng is a key figure in the realm of ferroelectric transistor technology, with a notable patent and a strong career at Globalfoundries Singapore Pte. Ltd. His contributions are paving the way for future advancements in memory devices.