Globalfoundries Singapore Pte. Ltd.

Kian Ming Ng

Eng Huat Toh

Shyue Seng Tan

A ferroelectric transistor (FeFET) memory device includes a metal gate, a gate dielectric layer adjacent to the metal gate, a semiconductor channel layer adjacent to the gate dielectric layer, a metal drain electrode, and a metal source electrode recessed into the semiconductor channel layer. The metal gate may be oriented above or below the metal source and drain electrodes with respect to a semiconductor substrate.

Growing community of inventors

Singapore, Singapore

Kian Ming Ng