San Jose, CA, United States of America

Khoi Doan

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2012-2015

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4 patents (USPTO):Explore Patents

Title: Khoi Doan: Innovator in MRAM Applications

Introduction

Khoi Doan is a prominent inventor based in San Jose, CA, known for his contributions to the field of magnetoresistive random access memory (MRAM) applications. With a total of 4 patents to his name, he has made significant advancements in the methods and technologies used in this area.

Latest Patents

Khoi Doan's latest patents include innovative methods for etching materials used in MRAM applications. One of his notable inventions provides methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate. This method involves providing a substrate with an insulating tunneling layer between two ferromagnetic layers, followed by ion implantation and etching processes. Another significant patent focuses on the removal of photoresist from low-k dielectric films. This method includes forming and patterning a photoresist layer above a low-k dielectric layer, followed by a series of process cycles to effectively remove the photoresist.

Career Highlights

Khoi Doan is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display industries. His work at Applied Materials has allowed him to develop and refine his innovative techniques, contributing to the advancement of MRAM technology.

Collaborations

Throughout his career, Khoi has collaborated with notable colleagues, including Srinivas D Nemani and Yifeng Zhou. These collaborations have fostered a creative environment that has led to the development of groundbreaking technologies in the field.

Conclusion

Khoi Doan's contributions to MRAM applications and his innovative patents highlight his role as a key figure in the field of semiconductor technology. His work continues to influence advancements in memory storage solutions.

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