The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Mar. 24, 2011
Applicants:
Yifeng Zhou, Fremont, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Khoi Doan, San Jose, CA (US);
Jeremiah T. P. Pender, San Jose, CA (US);
Inventors:
Yifeng Zhou, Fremont, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Khoi Doan, San Jose, CA (US);
Jeremiah T. P. Pender, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A significantly improved low-k dielectric patterning method is described herein using plasma comprising an oxygen radical source and a silicon source to remove the photo-resist layer.