The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jan. 25, 2013
Applied Materials, Inc., Santa Clara, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Mang-Mang Ling, Sunnyvale, CA (US);
Khoi Doan, San Jose, CA (US);
Chi Hong Ching, Santa Clara, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer.