The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jul. 20, 2011
Yifeng Zhou, Fremont, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Khoi Doan, San Jose, CA (US);
Jeremiah T. P. Pender, San Jose, CA (US);
Yifeng Zhou, Fremont, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Khoi Doan, San Jose, CA (US);
Jeremiah T. P. Pender, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.