Khatik Bhagvan Pannalal

Title: Khatik Bhagvan Pannalal: Innovator in SRAM Technology

Introduction

Khatik Bhagvan Pannalal is a notable inventor based in Gujarat, India. He has made significant contributions to the field of integrated circuits, particularly in the area of static random access memory (SRAM) technology. His innovative approach has led to advancements that enhance the performance and efficiency of memory cell arrays.

Latest Patents

Khatik Bhagvan Pannalal holds a patent for an invention titled "Enhanced read sensing margin and minimized VDD for SRAM cell arrays." This patent describes a structure for an integrated circuit designed for data storage. The integrated circuit features a memory cell array of bit cells configured in an SRAM architecture. The memory cell array is connected to wordlines that control Read and Write operations. To improve the read sensing margin, the read port of a bit cell incorporates a wordline that drives two transistors, reducing data-dependent current leakage from the read bitline. Additionally, a weak transistor keeper configuration is utilized to compensate for current leakage, enhancing the overall performance of the SRAM configuration.

Career Highlights

Khatik Bhagvan Pannalal is currently employed at Synopsys, Inc., where he continues to work on innovative solutions in the field of integrated circuits. His expertise and dedication to advancing technology have made him a valuable asset to his team.

Collaborations

Some of his coworkers include M Sultan M Siddiqui and Sudhir Kumar Sharma, who collaborate with him on various projects within the company.

Conclusion

Khatik Bhagvan Pannalal's contributions to SRAM technology exemplify the impact of innovation in the field of integrated circuits. His patent reflects a commitment to enhancing memory performance, showcasing the importance of inventors in driving technological advancements.