Kezhou Xie

Title: Kezhou Xie: Innovator in HBT-FET Device Fabrication

Introduction

Kezhou Xie is a notable inventor based in Edison, NJ (US), recognized for his contributions to the field of semiconductor technology. He holds a total of 4 patents, showcasing his innovative approach to device fabrication.

Latest Patents

One of his latest patents focuses on "Structures and methods for fabricating vertically integrated HBT-FET device." This patent discloses methods and systems for fabricating integrated pairs of HBT (Heterojunction Bipolar Transistor) and FET (Field-Effect Transistor). A preferred embodiment of this invention includes a method for fabricating an integrated pair of GaAs-based HBT and FET. The process involves growing a first set of epitaxial layers for the FET on a semi-insulating GaAs substrate, fabricating a highly doped thick GaAs layer that serves as the cap layer for the FET and the subcollector layer for the HBT, and producing a second set of epitaxial layers for the HBT.

Career Highlights

Kezhou Xie has worked with prominent organizations, including Anadigics, Inc. and the U.S. Government as represented by the Secretary of the Army. His experience in these companies has significantly contributed to his expertise in semiconductor technologies.

Collaborations

Throughout his career, Kezhou has collaborated with talented individuals such as Oleh Krutko and Aditya K Gupta. These collaborations have likely enriched his work and led to innovative advancements in his field.

Conclusion

Kezhou Xie's contributions to the fabrication of HBT-FET devices highlight his innovative spirit and dedication to advancing semiconductor technology. His patents and career achievements reflect his significant impact on the industry.