The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Apr. 24, 1998
Applicant:
Inventors:
Melanie Cole, Churchville, MD (US);
Kezhou Xie, Edison, NJ (US);
Assignee:
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G32B 9/00 ;
U.S. Cl.
CPC ...
G32B 9/00 ;
Abstract
A GaN epilayaer grown on a lattice mismatched saphire substrate is subjected to rapid thermal processing in order the reduce the defect density especially in the proximate the top (device) surface of the GaN epilayer.