The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Feb. 20, 2004
Oleh Krutko, Glen Gardner, NJ (US);
Kezhou Xie, Edison, NJ (US);
Mohsen Shokrani, Greenbrook, NJ (US);
Aditya Gupta, Bridgewater, NJ (US);
Boris Gedzberg, Coram, NY (US);
Oleh Krutko, Glen Gardner, NJ (US);
Kezhou Xie, Edison, NJ (US);
Mohsen Shokrani, Greenbrook, NJ (US);
Aditya Gupta, Bridgewater, NJ (US);
Boris Gedzberg, Coram, NY (US);
Anadigics, Inc., Warren, NJ (US);
Abstract
Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for fabricating the FET on a semi-insulating GaAs substrate; fabricating a highly doped thick GaAs layer serving as the cap layer for the FET and the subcollector layer for the HBT; and producing a second set of epitaxial layers for fabricating the HBT.