Anadigics, Inc.

US Government As Represented by the Secretary of the Army

Kezhou Xie

Aditya K Gupta

Oleh Krutko

Boris Gedzberg

Mohsen Shokrani

Melanie Will Cole

M Ali Khatibzadeh

Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for fabricating the FET on a semi-insulating GaAs substrate; fabricating a highly doped thick GaAs layer serving as the cap layer for the FET and the subcollector layer for the HBT; and producing a second set of epitaxial layers for fabricating the HBT.

Structures and methods for fabricating vertically integrated HBT-FET device

Structures and methods for fabricating vertically integrated HBT/FET device

A monolithically integrated amplifier comprising at least one heterojunction bipolar transistor and at least one field effect transistor is disclosed wherein the field effect transistor provides improved ruggedness by limiting the base and/or collector current to the HBT during severe load mismatch and/or high overdrive.

Monolithically fabricated HBT amplification stage with current limiting FET

A GaN epilayaer grown on a lattice mismatched saphire substrate is subjected to rapid thermal processing in order the reduce the defect density especially in the proximate the top (device) surface of the GaN epilayer.

Low defect density gallium nitride epilayer and method of preparing the same

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Edison, NJ, United States of America

Kezhou Xie