Kevin J Dempsey

Title: Kevin J Dempsey: Innovator in Silicon Substrates

Introduction

Kevin J Dempsey is a notable inventor based in Somerville, MA (US). He has made significant contributions to the field of silicon substrates, particularly through his innovative patent related to internal gettering in SIMOX SOI silicon substrates. His work has implications for improving the quality and performance of silicon wafers used in various electronic applications.

Latest Patents

Dempsey holds a patent titled "Internal gettering in SIMOX SOI silicon substrates." This invention provides methods for forming SOI wafers that include internal gettering layers designed to sequester metallic impurities. In one embodiment, a plurality of sites for sequestering these impurities is created in a silicon substrate by implanting a selected dose of oxygen ions. Additionally, an epitaxial layer of crystalline silicon is formed over the substrate, with a buried continuous oxide layer generated in the epitaxial layer, often utilizing a SIMOX process. He has 1 patent to his name.

Career Highlights

Dempsey is associated with Ibis Technology Corporation, where he applies his expertise in silicon technology. His work at the company has been instrumental in advancing the development of silicon-on-insulator (SOI) technology, which is crucial for modern semiconductor devices.

Collaborations

Dempsey collaborates with various professionals in the field, including his coworker Yuri Erokhin. Their combined efforts contribute to the ongoing research and development in silicon substrate technologies.

Conclusion

Kevin J Dempsey is a prominent figure in the innovation of silicon substrates, with a focus on enhancing the quality of SOI wafers. His contributions through patents and collaborations continue to influence the semiconductor industry.