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For the Inventor, By the Inventor

Hwaseong, South Korea

Kevin Ahn

This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kevin Ahn. Retrieved from https://idiyas.com/inventor/kevin-ahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Chungcheongnam-do, KR (2014)
  • Hwaseong-si, KR (2014)

Company Filing History:

goldMedal3 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2014

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3 patents (USPTO):Explore Patents
1. 8796107 - Methods for fabricating semiconductor devices (2014-08-05),
2. 8766232 - Semiconductor memory devices having variable resistor and methods of fabricating the same (2014-07-01),
3. 8652915 - Methods of fabricating semiconductor devices using preliminary trenches with epitaxial growth (2014-02-18),

Title: Kevin Ahn - Innovative Inventor from Hwaseong-si, KR

Introduction: Kevin Ahn is a talented inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kevin Ahn holds several patents in the realm of artificial intelligence, robotics, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: Throughout his career, Kevin Ahn has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of what is possible in the world of innovation.

Collaborations: Kevin Ahn has collaborated with top engineers, scientists, and designers from around the globe, fostering a culture of creativity and excellence in all his projects.

Conclusion: Kevin Ahn's passion for innovation and his relentless drive to create a better future through technology make him a true pioneer in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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