The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Aug. 18, 2011
Applicants:

Kevin Ahn, Hwaseong-si, KR;

Sang-jine Park, Yongin-si, KR;

Jae-jik Baek, Seongnam-si, KR;

Bo-un Yoon, Seoul, KR;

Jeong-nam Han, Seoul, KR;

Inventors:

Kevin Ahn, Hwaseong-si, KR;

Sang-Jine Park, Yongin-si, KR;

Jae-Jik Baek, Seongnam-si, KR;

Bo-Un Yoon, Seoul, KR;

Jeong-Nam Han, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device can be provided by etching sidewalls of a preliminary trench in a substrate that are between immediately adjacent gate electrode structures, to recess the sidewalls further beneath the gate electrode structures to provide recessed sidewalls. Then, the recessed sidewalls and a bottom of the preliminary trench can be etched using crystallographic anisotropic etching to form a hexagonally shaped trench in the substrate.


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