Osaka, Japan

Kenya Nishiguchi

USPTO Granted Patents = 3 

Average Co-Inventor Count = 1.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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3 patents (USPTO):Explore Patents

Title: Kenya Nishiguchi: Innovator in Semiconductor Technology

Introduction

Kenya Nishiguchi is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Nishiguchi's latest patents include innovative designs for semiconductor devices. One notable patent describes a semiconductor device that features a plurality of gate fingers with various levels. This design includes a substrate, a channel layer, and gate fingers that are strategically arranged to optimize performance. Another patent outlines a semiconductor device that incorporates a source region and a drain region, both connected to a channel layer, with gates embedded within the semiconductor layer. These advancements aim to improve the overall efficiency and effectiveness of semiconductor applications.

Career Highlights

Kenya Nishiguchi is currently employed at Sumitomo Electric Industries, Limited, where he continues to develop cutting-edge semiconductor technologies. His expertise and innovative approach have positioned him as a key player in the industry.

Collaborations

Throughout his career, Nishiguchi has collaborated with talented individuals such as Akihiro Hayasaka and Takuji Yamamura. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Kenya Nishiguchi's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to advancing the field, and his work continues to influence the industry positively.

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