Semiconductor device including plurality of gate fingers with various levels

Abstract

A semiconductor device includes a substrate, a channel layer provided on the substrate, a semiconductor layer provided on the channel layer, gate fingers and a gate connection wiring provided on the semiconductor layer, and an insulating film provided between the semiconductor layer and the gate fingers, wherein the gate fingers includes a first gate finger, and a second gate finger closer to the center of the gate fingers in an arrangement direction than the first gate finger, wherein a first distance between a lower surface of the first gate finger in contact with the insulating film and an upper surface of the channel layer in contact with the semiconductor layer is greater than a second distance between a lower surface of the second gate finger in contact with the insulating film and the upper surface of the channel layer in contact with the semiconductor layer.