Osaka, Japan

Kenta Sugawara

This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignees: Sumitomo Electric Industries, Limited, Sumitomo Electric Device Innovations, Inc., Tohoku University. Active years: 2022-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenta Sugawara. Retrieved from https://idiyas.com/inventor/kenta-sugawara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 1


Company Filing History:


Years Active: 2022-2023

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3 patents (USPTO):Explore Patents

Title: Kenta Sugawara: Innovator in Semiconductor Technology

Introduction

Kenta Sugawara is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and manufacturing processes of semiconductor devices.

Latest Patents

One of Sugawara's latest patents is a process for forming a high electron mobility transistor (HEMT) that includes a gate electrode layer spaced apart from a silicon nitride film. This invention discloses a semiconductor device type of HEMT that features double silicon nitride films on a semiconductor layer. The first silicon nitride film is formed using the lower pressure chemical vapor deposition (LPCVD) technique, while the second is deposited by the plasma-assisted CVD (p-CVD) technique. The gate electrode arrangement consists of double metals, with one containing nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A key feature of this invention is that the first metal is in contact with the semiconductor layer but is spaced apart from the second silicon nitride film.

Another notable patent involves a method of manufacturing a semiconductor device that includes a substrate, a first nitride layer containing gallium on the substrate, and a second nitride layer containing silicon on the first nitride layer. This method generates an etchant of a gas containing chlorine or bromine atoms and selectively removes the second nitride layer. The etchant is produced by plasma discharge of the gas, ensuring that the second nitride layer and the first nitride layer are not exposed to ultraviolet rays during the process.

Career Highlights

Kenta Sugawara has worked with several esteemed companies, including Sumitomo Electric Industries, Limited and Sumitomo Electric Device Innovations, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to innovative solutions in the industry.

Collaborations

Throughout his career, Sugawara has collaborated with notable colleagues, including Yukinori Nose and Daisuke Ohori. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Kenta Sugawara is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His patents reflect a commitment

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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