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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11710773 B1

PDFFull Text
Date of Patent:
Jul. 25, 2023

Filed:

Jan. 29, 2021

Process of forming a high electron mobility transistor including a gate electrode layer spaced apart from a silicon nitride film

Applicants:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventors:

Kenta Sugawara, Osaka, JP;

Yukinori Nose, Yokohama, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

Smith, Gambrell & Russell, LLP.

Primary Examiner:

Phuc T Dang

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/28581 (2013.01); H01L 21/31116 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 21/0272 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

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