Orlando, FL, United States of America

Kent Rossman



Average Co-Inventor Count = 1.6

ph-index = 12

Forward Citations = 2,397(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (1998 - 2000)
  • Fremont, CA (US) (2000)
  • San Jose, CA (US) (1999 - 2007)
  • Orlando, FL (US) (2002 - 2008)

Company Filing History:


Years Active: 1998-2008

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22 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Kent Rossman in the Field of Advanced Materials

Introduction

Kent Rossman, an innovative inventor based in Orlando, FL, has made significant contributions to the field of advanced materials through his extensive work in the semiconductor industry. With a total of 22 patents to his name, Rossman's expertise primarily focuses on high-density plasma chemical vapor deposition (HDP-CVD) technologies.

Latest Patents

Among his notable patents, Rossman has developed a method titled "Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD." This innovative technique involves depositing a conformal dielectric layer by selectively reducing the flow of deposition gases into a process chamber, thereby enhancing the sputtering gas concentration without increasing chamber pressure. By periodically terminating the flow of deposition gases, a sputtering gas concentration nearing 100% can be achieved, significantly improving the etch rate of dielectric layers with ideal gap-filling properties.

Another significant patent by Rossman is the "Method for reducing the intrinsic stress of high density plasma films." This method utilizes an HDP-CVD system to form a low-stress layer on a substrate by controlling the application of capacitively coupled RF energy. The innovative approach involves the introduction of a process gas into the chamber, followed by plasma formation and biasing toward the substrate to enhance the sputtering effect, resulting in the deposition of high-quality silicon oxide films.

Career Highlights

Kent Rossman is currently associated with Applied Materials, Inc., where he collaborates with a team of talented professionals to propel advancements in materials technology. His career is marked by a commitment to innovation and excellence in the semiconductor manufacturing space.

Collaborations

Throughout his career, Rossman has worked closely with esteemed colleagues, including Zhuang Li and Turgut Sahin. Together, they have contributed significantly to the development of new technologies that address the evolving needs of the semiconductor industry, fostering collaboration that drives growth and innovation.

Conclusion

Kent Rossman stands out as a dedicated inventor and innovator in the field of semiconductor technology. His 22 patents underscore his capacity to develop cutting-edge solutions that enhance material properties and manufacturing processes. Through his work at Applied Materials, Inc., and his collaborations with talented peers, Rossman continues to make strides in advancing technology in the semiconductor landscape.

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