The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Jul. 27, 1999
K. V. Ravi, Atherton, CA (US);
Kent Rossman, San Jose, CA (US);
Turgut Sahin, Cupertino, CA (US);
Pravin Narwankar, Sunnyvale, CA (US);
K. V. Ravi, Atherton, CA (US);
Kent Rossman, San Jose, CA (US);
Turgut Sahin, Cupertino, CA (US);
Pravin Narwankar, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.