This inventor holds 2 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 1999-2007.
Company Filing History:
Years Active: 1999-2007
Title: K V Ravi: Innovator in High Density Plasma Technology
Introduction
K V Ravi is a notable inventor based in Atherton, California. He has made significant contributions to the field of high density plasma technology, holding 2 patents that showcase his innovative approaches.
Latest Patents
One of his latest patents is a method for reducing the intrinsic stress of high density plasma films. This method involves forming a layer of reduced stress on a substrate using an HDP-CVD system. The process includes delaying or interrupting the application of capacitively coupled RF energy. A process gas is introduced into the HDP system chamber, and a plasma is formed from this gas by applying RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing it toward the substrate to enhance the sputtering effect. In a preferred embodiment, the deposited film is a silicon oxide film, with biasing performed by applying capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.
Career Highlights
K V Ravi is currently employed at Applied Materials, Inc., where he continues to develop innovative technologies in the semiconductor industry. His work has had a significant impact on the efficiency and effectiveness of plasma film applications.
Collaborations
He has collaborated with notable coworkers such as Kent Rossman and Turgut Sahin, contributing to advancements in their shared field of expertise.
Conclusion
K V Ravi's contributions to high density plasma technology through his patents and work at Applied Materials, Inc. highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of semiconductor technology.