The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Sep. 04, 2002
Kent Rossman, Orlando, FL (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered by the conformal dielectric layer is disposed. By selectively decreasing the deposition gas present in the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.