Company Filing History:
Years Active: 2023-2025
Title: Innovations of Kensho Tanaka in SiC Epitaxial Wafer Technology
Introduction
Kensho Tanaka is a notable inventor based in Chichibu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) epitaxial wafers. With a total of 2 patents to his name, Tanaka's work is paving the way for advancements in electronic devices.
Latest Patents
Tanaka's latest patents focus on the SiC epitaxial wafer and methods for its manufacturing. The first patent describes a SiC epitaxial wafer that includes a SiC substrate and an epitaxial layer laminated on it. This epitaxial layer contains an impurity element that determines its conductivity type, along with boron, which has a different conductivity type. Notably, the concentration of boron is maintained at less than 1.0×10 cm at any position in the plane of the epitaxial layer. The second patent reiterates similar features, emphasizing the innovative approach to controlling the conductivity of the epitaxial layer.
Career Highlights
Kensho Tanaka is currently employed at Resonac Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance and reliability of SiC wafers, which are crucial for high-power and high-frequency applications.
Collaborations
Tanaka collaborates with Yoshikazu Umeta, a fellow innovator in the field. Their combined expertise contributes to the ongoing research and development efforts at Resonac Corporation.
Conclusion
Kensho Tanaka's contributions to SiC epitaxial wafer technology highlight his role as a leading inventor in the semiconductor industry. His innovative patents and collaborative efforts are set to influence the future of electronic devices significantly.