Resonac Corporation

Kensho Tanaka

Yoshikazu Umeta

A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×10cmat any position in the plane of the epitaxial layer.

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class

A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0&#xd7;10cmat any position in the plane of the epitaxial layer.

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Chichibu, Japan

Kensho Tanaka