The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Aug. 02, 2022
Applicant:
Showa Denko K. K., Tokyo, JP;
Inventors:
Kensho Tanaka, Chichibu, JP;
Yoshikazu Umeta, Chichibu, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 21/02 (2006.01); C23C 16/44 (2006.01); C30B 25/20 (2006.01); C30B 25/16 (2006.01); C23C 16/32 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C23C 16/325 (2013.01); C23C 16/4408 (2013.01); C23C 16/52 (2013.01); C30B 25/16 (2013.01); C30B 25/205 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01);
Abstract
A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×10cmat any position in the plane of the epitaxial layer.