Company Filing History:
Years Active: 1990-1991
Title: Innovations of Kenneth J Polasko
Introduction
Kenneth J Polasko is a notable inventor based in Latham, NY (US). He has made significant contributions to the field of photodiodes, holding a total of 3 patents. His work primarily focuses on methods for fabricating Schottky photodiodes, which are essential components in various electronic applications.
Latest Patents
Polasko's latest patents include a method for forming Schottky photodiodes. This method involves several steps: forming a base electrode on the principal substrate surface, depositing a layer of N+ amorphous silicon on the base electrode, depositing a layer of intrinsic silicon on the N+ amorphous silicon layer, depositing a Schottky contact on the intrinsic silicon layer, and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island. Another significant patent is for a Schottky photodiode with a silicide layer, which follows a similar fabrication process.
Career Highlights
Kenneth J Polasko is associated with General Electric Company, where he has been able to apply his innovative ideas and technical expertise. His work has contributed to advancements in semiconductor technology, particularly in the development of efficient photodiodes.
Collaborations
Polasko has collaborated with notable coworkers such as Ivan L Wemple and Yoav Nissan-Cohen. These collaborations have likely enhanced the innovation process and led to the successful development of his patented technologies.
Conclusion
Kenneth J Polasko's contributions to the field of photodiodes through his patents and work at General Electric Company highlight his role as an influential inventor. His innovative methods continue to impact the electronics industry positively.