The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1991
Filed:
Jun. 21, 1989
Applicant:
Inventors:
Kenneth J Polasko, Latham, NY (US);
Ivan L Wemple, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 30 ; 357 67 ; 357 58 ; 357 32 ;
Abstract
A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous silicon layer; depositing a Schottky contact on the intrinsic silicon layer; and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island.