Castleton, NY, United States of America

Kenneth E Morgan

USPTO Granted Patents = 28 


 

Average Co-Inventor Count = 4.7

ph-index = 11

Forward Citations = 288(Granted Patents)


Company Filing History:


Years Active: 2006-2022

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28 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Kenneth E. Morgan in Aluminum Nitride Research

Introduction

Kenneth E. Morgan is a prolific inventor based in Castleton, NY, known for his significant contributions to the field of materials science, particularly in the development of aluminum nitride (AlN) crystals. With a remarkable portfolio of 28 patents, Morgan's work focuses on enhancing the quality and production methods of AlN crystals, crucial for various applications in optoelectronic devices.

Latest Patents

Among Kenneth E. Morgan's latest patents is "Large aluminum nitride crystals with reduced defects and methods of making them." This patent addresses critical challenges in crystal growth, including cracking, etch pit generation during polishing, and optical transparency issues in AlN wafers. By reducing microvoid (MV) density, Morgan's methods facilitate the production of large, bulk AlN crystals with low defect densities, achieving dislocation and inclusion densities below 10 cm.

Another notable patent is "Defect reduction in seeded aluminum nitride crystal growth." This patent describes methods for growing bulk single crystals of AlN, characterized by an areal planar defect density of less than or equal to 100 cm. The innovative technique involves utilizing a foundation that forms part of an AlN seed holder, enabling controlled growth conditions for high-quality AlN crystals.

Career Highlights

Kenneth E. Morgan has made substantial strides in the field, particularly during his tenure at Crystal IS, Inc. and Rensselaer Polytechnic Institute. His experience in diverse roles has allowed him to push the boundaries of research and development in aluminum nitride technologies, contributing to enhanced production strategies.

Collaborations

Throughout his career, Morgan has collaborated with notable colleagues such as Leo J. Schowalter and Robert T. Bondokov. These partnerships have fostered a productive exchange of ideas and advancements in their shared pursuit of high-performance materials, further enriching the field of aluminum nitride research.

Conclusion

Kenneth E. Morgan's extensive patent portfolio and collaborative efforts underscore his commitment to innovation and excellence in aluminum nitride research. His work not only addresses pressing challenges in crystal growth but also paves the way for practical applications of AlN in next-generation optoelectronic devices. With a continued focus on reducing defects and improving production methods, Morgan remains a key figure in the advancement of materials science.

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