The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Apr. 13, 2015
Applicant:
Crystal Is, Inc., Green Island, NY (US);
Inventors:
Robert T. Bondokov, Watervliet, NY (US);
Leo J. Schowalter, Latham, NY (US);
Kenneth Morgan, Castleton, NY (US);
Glen A. Slack, Scotia, NY (US);
Shailaja P. Rao, Albany, NY (US);
Shawn Robert Gibb, Clifton Park, NY (US);
Assignee:
CRYSTAL IS, INC., Green Island, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 23/00 (2013.01); C30B 29/403 (2013.01); Y10T 428/2982 (2015.01);
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.