The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Mar. 25, 2016
Robert Bondokov, Watervliet, NY (US);
Kenneth E. Morgan, Castleton, NY (US);
Glen A. Slack, Scotia, NY (US);
Leo J. Schowalter, Latham, NY (US);
Robert Bondokov, Watervliet, NY (US);
Kenneth E. Morgan, Castleton, NY (US);
Glen A. Slack, Scotia, NY (US);
Leo J. Schowalter, Latham, NY (US);
CRYSTAL IS, INC., Green Island, NY (US);
Abstract
Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm.