The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Aug. 08, 2016
Applicant:
Crystal Is, Inc., Green Island, NY (US);
Inventors:
Leo Schowalter, Latham, NY (US);
Glen A. Slack, Scotia, NY (US);
Juan Carlos Rojo, South Beach, NY (US);
Robert T. Bondokov, Watervliet, NY (US);
Kenneth E. Morgan, Castleton, NY (US);
Joseph A. Smart, Mooresville, NC (US);
Assignee:
CRYSTAL IS, INC., Green Island, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); C30B 25/16 (2006.01); H01L 29/32 (2006.01); C30B 23/02 (2006.01); C30B 11/00 (2006.01); C30B 23/00 (2006.01); C30B 29/40 (2006.01); H01L 33/00 (2010.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); C30B 25/20 (2006.01); H01L 21/02 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 11/003 (2013.01); C30B 23/00 (2013.01); C30B 23/025 (2013.01); C30B 25/10 (2013.01); C30B 25/14 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02634 (2013.01); H01L 29/04 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/32 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/325 (2013.01); H01L 33/025 (2013.01); H01L 2924/0002 (2013.01); Y10T 428/21 (2015.01);
Abstract
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cmor less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.