Kyoto, Japan

Kenji Ishizaki

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Kenji Ishizaki: Innovator in Surface Emitting Laser Technology

Introduction

Kenji Ishizaki is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of surface emitting laser elements.

Latest Patents

Ishizaki holds a patent for a surface emitting laser element and its manufacturing method. This innovative device is formed from a group III nitride semiconductor and includes a first clad layer, a first guide layer with a photonic crystal layer, and an active layer, among other components. The design features a unique arrangement of voids that provide two-dimensional periodicity, enhancing the laser's performance.

Career Highlights

Throughout his career, Kenji Ishizaki has worked with prestigious institutions, including Kyoto University and Stanley Electric Co., Ltd. His work has focused on advancing laser technology, which has applications in various fields, including telecommunications and medical devices.

Collaborations

Ishizaki has collaborated with esteemed colleagues such as Susumu Noda and Yoshinori Tanaka. These partnerships have fostered innovation and contributed to the successful development of new technologies in the semiconductor industry.

Conclusion

Kenji Ishizaki's contributions to surface emitting laser technology exemplify his dedication to innovation in the field of semiconductors. His work continues to influence advancements in laser applications and semiconductor research.

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