The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Aug. 29, 2019
Kyoto University, Kyoto, JP;
Stanley Electric Co., Ltd., Meguro-ku, JP;
Susumu Noda, Kyoto, JP;
Yoshinori Tanaka, Kyoto, JP;
Menaka De Zoysa, Kyoto, JP;
Kenji Ishizaki, Kyoto, JP;
Tomoaki Koizumi, Tokyo, JP;
Kei Emoto, Tokyo, JP;
KYOTO UNIVERSITY, Kyoto, JP;
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Abstract
A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.