Tokyo, Japan

Kengo Hirasawa

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Jsr Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kengo Hirasawa. Retrieved from https://idiyas.com/inventor/kengo-hirasawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Kengo Hirasawa: Innovator in Semiconductor Technology

Introduction

Kengo Hirasawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique silicon-containing composition that enhances semiconductor substrates.

Latest Patents

Hirasawa holds a patent for a silicon-containing composition and method of producing a semiconductor substrate. This composition includes a polysiloxane compound and solvent. The polysiloxane compound features a fluorine atom and a group that includes an ester bond. The structural units of the polysiloxane compound are represented by specific formulas, which detail the organic groups and their components.

Career Highlights

Kengo Hirasawa is associated with JSR Corporation, a leading company in the field of advanced materials. His work at JSR Corporation has been instrumental in pushing the boundaries of semiconductor technology. Hirasawa's expertise and innovative mindset have positioned him as a key figure in the industry.

Collaborations

Hirasawa collaborates with Ryuichi Serizawa, another talented individual in the field. Their partnership has fostered advancements in semiconductor research and development.

Conclusion

Kengo Hirasawa's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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