This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2015
Title: Keng-Ham Lin and Dielectric Film Formation
Introduction
Keng-Ham Lin is an inventor based in Gueishan, Taiwan. His patent work concerns a method for forming dielectric films using multiple oxidation gases.
Latest Patents
The provided information lists 1 patent for Lin: “Method of Forming Dielectric Films Using a Plurality of Oxidation Gases.” The method exposes a substrate to a first pulse of an oxygen-containing gas, followed by multiple consecutive pulses of a different oxygen-containing gas. A subsequent pulse of a metal-containing gas completes the sequence. These steps can be repeated to produce a dielectric film of a predetermined thickness.
Career Highlights
Lin is associated with Taiwan Semiconductor Manufacturing Company Limited. His patent describes a process for controlling dielectric film formation through sequential gas exposures.
Collaborations
The provided information identifies Chia-Ming Tsai and Yu-Min Chang as Lin’s coworkers.
Conclusion
Keng-Ham Lin’s listed patent focuses on a repeatable, multi-gas process for forming dielectric films, reflecting his work in semiconductor-related innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile