The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Dec. 07, 2012
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Liang-Chen Chi, Hsin-Chu, TW;
Chia-Ming Tsai, Zhubei, TW;
Yu-Min Chang, Hsin-Chu, TW;
Chin-Kun Wang, Hsin-Chu, TW;
Miin-Jang Cheng, Taipei, TW;
Keng-Ham Lin, Guishan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile