Tokyo, Japan

Keiko Fujihira

This inventor holds 2 USPTO granted patents. Top assignee: Mitsubishi Electric Corporation. Active years: 2011-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keiko Fujihira. Retrieved from https://idiyas.com/inventor/keiko-fujihira

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Location History:

  • Tokyo, JP (2011)
  • Chiyoda-ku, JP (2012)

Company Filing History:


Years Active: 2011-2012

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Keiko Fujihira

Introduction

Keiko Fujihira, a distinguished inventor based in Chiyoda-ku, Japan, has made significant strides in the field of semiconductor technology. With an impressive portfolio of two patents, Fujihira has focused on developing advanced methods and devices that enhance the performance of semiconductor components.

Latest Patents

Her latest patents include a semiconductor device and a method of manufacturing the same. This invention addresses the need to accurately determine impurity concentration distributions within a field relieving region, significantly reducing ON-resistance. The design comprises a substrate, a first and second drift layer, along with well regions and a current control region. Specifically, the arrangement ensures that the first well region extends from the edge of the second drift layer into the first drift layer's vicinity, optimizing the device's efficiency.

Another notable patent is related to a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and its manufacturing method. This design achieves a high breakdown voltage and low on-state loss, thanks to enhanced channel mobility and a lower gate threshold voltage. The structure includes a drift layer of silicon carbide with differentiated impurity concentrations across regions, paving the way for advancements in semiconductor technology.

Career Highlights

Throughout her career, Keiko Fujihira has been associated with Mitsubishi Electric Corporation, a leading company in the electronics industry. Her work focuses on semiconductor innovations, reflecting her commitment to pushing technological boundaries in this field.

Collaborations

Fujihira collaborates with notable professionals, including Naruhisa Miura and Masayuki Imaizumi. These partnerships have fostered a dynamic research environment, facilitating groundbreaking advancements in semiconductor manufacturing techniques and applications.

Conclusion

In summary, Keiko Fujihira's inventive contributions to semiconductor technology exemplify her dedication to innovation. As she continues her work at Mitsubishi Electric Corporation, her efforts are likely to impact the industry significantly, enhancing device performance and efficiency for future applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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