The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Oct. 06, 2006
Keiko Fujihira, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Keiko Fujihira, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layerof a MOSFET made of silicon carbide according to the present invention has a first regionand a second region. The first regionis a region from the surface to a first given depth. The second regionis formed in a region deeper than the first given depth. The impurity concentration of the first regionis lower than the impurity concentration of the second region
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile