The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Nov. 17, 2006
Naruhisa Miura, Chiyoda-ku, JP;
Keiko Fujihira, Chiyoda-ku, JP;
Kenichi Otsuka, Chiyoda-ku, JP;
Masayuki Imaizumi, Chiyoda-ku, JP;
Naruhisa Miura, Chiyoda-ku, JP;
Keiko Fujihira, Chiyoda-ku, JP;
Kenichi Otsuka, Chiyoda-ku, JP;
Masayuki Imaizumi, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device and a method of manufacturing the same, to appropriately determine an impurity concentration distribution of a field relieving region and reduce an ON-resistance. The semiconductor device includes a substrate, a first drift layer, a second drift layer, a first well region, a second well region, a current control region, and a field relieving region. The first well region is disposed continuously from an end portion adjacent to the vicinity of outer peripheral portion of the second drift layer to a portion of the first drift layer below the vicinity of outer peripheral portion. The field relieving region is so disposed in the first drift layer as to be adjacent to the first well region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile