Miyagi, Japan

Kazuyuki Shouji

This inventor holds 1 USPTO granted patent. Top assignee: Adv Antest Corporation. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuyuki Shouji. Retrieved from https://idiyas.com/inventor/kazuyuki-shouji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Kazuyuki Shouji: Innovator in Semiconductor Technology

Introduction

Kazuyuki Shouji is a notable inventor based in Miyagi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Kazuyuki Shouji holds 1 patent for a semiconductor device. This invention includes a semiconductor layer, a source electrode, a drain electrode, and two gate electrodes. The design allows for improved control of electrical conduction, with specific conditions under which the semiconductor layer does not conduct. This advancement is crucial for the development of more efficient electronic devices.

Career Highlights

Kazuyuki Shouji is currently employed at Adv Antest Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more reliable and efficient for various applications.

Collaborations

Kazuyuki has collaborated with talented coworkers such as Taku Sato and Kazuya Uryu. Their combined expertise contributes to the innovative environment at Adv Antest Corporation.

Conclusion

Kazuyuki Shouji's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Adv Antest Corporation highlight the importance of advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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