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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10229912 B1

PDFFull Text
Date of Patent:
Mar. 12, 2019

Filed:

Apr. 18, 2016

Semiconductor device

Applicant:

Advantest Corporation, Tokyo, JP;

Inventors:

Taku Sato, Miyagi, JP;

Kazuya Uryu, Miyagi, JP;

Kazuyuki Shouji, Miyagi, JP;

Assignee:

ADVANTEST CORPORATION, Tokyo, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Joseph Galvin, III

Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/78 (2006.01); H01L 27/098 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/095 (2013.01); H01L 27/098 (2013.01); H01L 29/0843 (2013.01); H01L 29/207 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 29/1029 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01);
Abstract

According to the present invention, a semiconductor device includes a semiconductor layer, a source electrode provided in the semiconductor layer, a drain electrode provided in the semiconductor layer and disposed away from the source electrode, a first gate electrode provided between the source electrode and the drain electrode and a second gate electrode provided between the source electrode and the drain electrode, the second gate electrode having at least a part thereof located closer to the drain electrode than the first gate electrode. The semiconductor layer includes a first facing part that is a part facing the first gate electrode; and a second facing part that is a part facing the second gate electrode. The first facing part does not conduct when a first gate voltage is 0 V or less. The second facing part does not conduct when a second gate voltage is 0 V or less.

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