Location History:
- Oizumi-machi, JP (2005)
- Gunma, JP (2009)
Company Filing History:
Years Active: 2005-2009
Title: Kazutomo Goshima: Innovator in Semiconductor Technology
Introduction
Kazutomo Goshima is a notable inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.
Latest Patents
Goshima's latest patents include a semiconductor diode device with a lateral transistor. This invention addresses the issue of leakage current caused by a vertical parasitic bipolar transistor, thereby improving current efficiency. The design incorporates an element isolation insulation film on an N well layer, with strategically placed Player elements and an electrode layer to optimize performance.
Another significant patent is for a semiconductor device that integrates MOS transistors and bipolar transistors on a single semiconductor substrate. This innovation aims to reduce the number of steps in the BiCMOS process, enhancing manufacturing efficiency. The design features multiple N-wells and P-wells, facilitating the formation of both N-channel MOS transistors and vertical NPN bipolar transistors.
Career Highlights
Kazutomo Goshima is currently employed at Sanyo Electric Co., Ltd., where he continues to develop cutting-edge semiconductor technologies. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
Goshima has collaborated with notable colleagues, including Toshiyuki Ohkoda and Toshimitsu Taniguchi. These partnerships have contributed to the successful development of his innovative patents.
Conclusion
Kazutomo Goshima's contributions to semiconductor technology reflect his dedication to innovation and efficiency. His patents demonstrate a commitment to solving complex challenges in the field, making a lasting impact on the industry.