The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Apr. 16, 2007
Takashi Hiroshima, Gunma, JP;
Kazutomo Goshima, Gunma, JP;
Takashi Hiroshima, Gunma, JP;
Kazutomo Goshima, Gunma, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Abstract
The invention is directed to a semiconductor device having a diode element which prevents a leakage current due to a vertical parasitic bipolar transistor and enhances current efficiency. An element isolation insulation film is provided on an N well layer, and a first Player and a second Player are formed on the N well layer surrounded by the element isolation insulation film, the second Player being formed at a distance from the first Player. An electrode layer is formed on the N well layer between the first Player and the second Player. An Nlayer for a contact is formed on the N well layer between the element isolation insulation film and other element isolation insulation film. The first Player is connected with an anode wiring, and the electrode layer, the second Player, and the Nlayer are connected with a cathode wiring. A diode element utilizing a lateral PNP bipolar transistor is thus formed on the semiconductor substrate.