The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Apr. 02, 2004
Kazutomo Goshima, Oizumi-machi, JP;
Toshiyuki Ohkoda, Oizumi-machi, JP;
Toshimitsu Taniguchi, Oizumi-machi, JP;
Kazutomo Goshima, Oizumi-machi, JP;
Toshiyuki Ohkoda, Oizumi-machi, JP;
Toshimitsu Taniguchi, Oizumi-machi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
The invention is directed to reducing of the number of steps in a BiCMOS process. A first N-wellA and a second N-wellB are formed deeply on a surface of a P-type semiconductor substrate. A first P-wellA is formed in the first N-wellA, and an N-channel MOS transistor is formed in the first P-wellA. The second N-wellB is used as a collector of a vertical NPN bipolar transistor. A second P-wellB is formed in the second N-wellB. The second P-wellB is formed simultaneously with the first P-wellA. The second P-wellB is used as a base of the vertical NPN bipolar transistor. An N+ emitter layer and a P+ base electrode layer of the vertical NPN bipolar transistor are formed on a surface of the second P-wellB.