Kazuo Tsuru

Title: Kazuo Tsuru: Innovator in Semiconductor Technology

Introduction

Kazuo Tsuru is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Tsuru's latest patents is for a semiconductor device with a high breakdown voltage. This invention involves a power transistor that comprises a semiconductor substrate with a PN junction exposed on its major surface. A semi-insulative polysilicon film is formed on this surface, covering the PN junction. The polysilicon film contains elements such as carbon, oxygen, and nitrogen, and has a thickness of about 3000 Å.

Another notable patent is a method of controlling the lifetime of minority carriers by electron beam. This patent describes a semiconductor device and a manufacturing method that includes a semi-insulating film with a high trap density. This design prevents charges from remaining in the film and maintains carrier density at the substrate surface during radiation exposure. The method allows for easy control of minority carrier lifetime without compromising junction breakdown voltages.

Career Highlights

Kazuo Tsuru is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has been instrumental in advancing semiconductor technologies, contributing to the company's reputation for innovation and quality.

Collaborations

Tsuru has collaborated with notable coworkers, including Yutaka Koshino and Yoshiro Baba. Their combined expertise has fostered a productive environment for innovation and development in semiconductor technology.

Conclusion

Kazuo Tsuru's contributions to semiconductor technology through his patents and work at Toshiba highlight his role as a key innovator in the field. His inventions continue to influence the development of advanced semiconductor devices.