The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1991
Filed:
Sep. 11, 1986
Applicant:
Inventors:
Yoshiro Baba, Yokohama, JP;
Kazuo Tsuru, Yokohama, JP;
Tatsuo Akiyama, Tokyo, JP;
Yutaka Koshino, Yokosuka, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 53 ; 357 52 ;
Abstract
There is disclosed a power transistor comprising a semiconductor substrate having a PN junction exposed on a major surface of the semiconductor substrate, and a semiinsulative polysilicon film formed on the major surface, the polysilicon film covering the PN junction, the polysilicon film containing at least one of carbon, oxygen, and nitrogen, and the polysilicon film having a thickness of about 3000 .ANG..
Baba, Yoshiro. (1991). Semiconductor device with a high breakdown voltage (U.S. Patent No. 5031021). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5031021
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile