Kabushiki Kaisha Toshiba

Kazuo Tsuru

Yutaka Koshino

Yoshiro Baba

Tatsuo Akiyama

Yoshikazu Usuki

Shun-ichi Hiraki

There is disclosed a power transistor comprising a semiconductor substrate having a PN junction exposed on a major surface of the semiconductor substrate, and a semiinsulative polysilicon film formed on the major surface, the polysilicon film covering the PN junction, the polysilicon film containing at least one of carbon, oxygen, and nitrogen, and the polysilicon film having a thickness of about 3000 .ANG..

Semiconductor device with a high breakdown voltage

A semiconductor device and a method of manufacturing the same are disclosed wherein a semi-insulating film having a high trap density is formed on a semiconductor substrate so as to prevent charges from remaining in the semi-insulating film and to prevent a change in carrier density at the substrate surface upon irradiation thereof with radiation. The lifetime of minority carriers can be easily controlled without decreasing the junction breakdown voltages.

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Yokohama, Japan

Kazuo Tsuru