Kazunori Ishisaka

Title: Kazunori Ishisaka: Innovator in Silicon Semiconductor Technology

Introduction

Kazunori Ishisaka is a prominent inventor based in Hikari, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon semiconductor substrates. With a total of 2 patents to his name, Ishisaka's work has had a notable impact on the industry.

Latest Patents

Ishisaka's latest patents include innovations in silicon semiconductor substrates and processes for their production. One of his patents describes a semiconductor substrate that, after heat treatment in a non-oxidizing atmosphere, exhibits a denuded zone depth greater than 12 µm. This substrate also features a locally densified portion produced by nitrogen segregation, which shows a signal strength two or more times the average signal strength at depths of 12 µm or more. Additionally, the density of crystal defects from oxygen precipitates is noted to be 5×10/cm or more, achieved through heat treatment at temperatures of 1200°C or more.

Another patent focuses on a silicon semiconductor substrate that realizes a defect-free region of void-type crystals to a greater depth. This innovation allows for a reduction in production duration. The substrate is derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method, and it is produced by heat treating at temperatures exceeding 1150°C.

Career Highlights

Throughout his career, Ishisaka has worked with notable companies in the semiconductor industry, including Siltronic AG and Wacker Siltronic Gesellschaft für Halbleiter Materialien AG. His experience in these organizations has contributed to his expertise in semiconductor technology.

Collaborations

Ishisaka has collaborated with several professionals in his field, including Akiyoshi Tachikawa and Atsushi Ikari. These collaborations have likely enriched his research and development efforts.

Conclusion

Kazunori Ishisaka's contributions to silicon semiconductor technology through his patents and career experiences highlight his role as an innovator in the field. His work continues to influence advancements in semiconductor substrates, showcasing the importance of innovation in technology.