The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Sep. 11, 2002
Akiyoshi Tachikawa, Yamaguchi, JP;
Kazunori Ishisaka, Yamaguchi, JP;
Wacker Siltronic Gesellschaft Für Halbleiter Materialien AG, Burghausen, DE;
Abstract
A silicon semiconductor substrate which realizes a defect-free region of void type crystals to a greater depth and allows the duration of production to be decreased and a method for the production thereof are provided. A silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method, which is obtainable by using a silicon semiconductor substrate satisfying the relational expression, 0.2≧V/S/R, providing V denotes the volume of void type defects, S denotes the surface area thereof, and R denotes the radius of spherical defects presumed to have the same volume as the void defects having the volume of V, and heat treating this substrate at a temperature exceeding 1150° C.